Fabrication of polycrystalline silicon films by Al-induced crystallization of silicon-rich oxide films

被引：5

作者：

Yoon, Jong-Hwan ^{[1
]}

机构：

[1] Kangwon Natl Univ, Dept Phys, 1 Gangwondaehak Gil, Chunchon 24341, Gangwon Do, South Korea

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2016年 / 10卷 / 09期

关键词：

polycrystalline materials; silicon; SiOx; aluminum; crystallization; layer exchange; ALUMINUM-INDUCED CRYSTALLIZATION; SI THIN-FILM; ELECTRON-MICROSCOPY; LAYER EXCHANGE; TEMPERATURE; QUALITY; GLASS;

D O I：

10.1002/pssr.201600198

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline silicon (poly-Si) films were fabricated by aluminum (Al)-induced crystallization of Si-rich oxide (SiOx) films. The fabrication was achieved by thermal annealing of SiOx/Al bilayers below the eutectic temperature of the Al-Si alloy. The poly-Si film resulting from SiO1.45 exhibited good crystallinity with highly preferential (111) orientation, as deduced from Raman scattering, X-ray diffraction, and transmission electron microscopy measurements. The poly-Si film is probably formed by the Al-induced layer exchange mechanism, which is mediated by Al oxide. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：668 / 672

页数：5

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