Effect of sol concentration on the structural, morphological, optical and photoluminescence properties of zirconia thin films

被引:35
作者
Joy, K. [1 ]
Maneeshya, L. V. [1 ]
Thomas, Jijimon K. [1 ]
Thomas, P. V. [1 ]
机构
[1] Mar Ivanios Coll, Thin Film Lab, Post Grad & Res Dept Phys, Thiruvananthapuram 695015, Kerala, India
关键词
Thin films; Zirconia; Sol-gel precursors; Photoluminescence; X-ray diffraction; Atomic force microscopy; Optical properties; ZRO2; FILMS; EVAPORATION;
D O I
10.1016/j.tsf.2011.11.038
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
ZrO2 thin films were deposited on quartz substrates from 10 wt.%, 20 wt.% and 40 wt.% solutions of Zirconium-n-butoxide in isopropanol by sol-gel dip-coating technique. Higher concentrated sols of 20 wt.% and 40 wt.% exhibited faster gelation, where as 10 wt.% sol remained stable for two months and films synthesized from this sol remained transparent and continuous even for 12 coatings. Ellipsometric study revealed that refractive index of the films increased with increase in sol concentration which is ascribed to the decrease in porosity. X-ray diffraction study showed that a tailoring of grain size from 7.9 to 39.2 nm is possible with increase in sal concentration. Atomic force microscopy studies showed a change in growth mode from vertical to lateral mode with increase in sol concentration. The film surface revealed positive skewness and high kurtosis values which make them favorable for tribological applications. The average optical transmittance in the visible region is highest (greater than 90%) for the film deposited from 10 wt.% sol. The optical band gap decreased from 5.74 to 5.62 eV with increase in the sol concentration. Photoluminescence (PL) spectra of the films exhibit an increase in the emission intensity with increase in sol concentration which substantiates better crystalline quality of the film deposited from 40 wt.% sol and increase in oxygen vacancies. The "Red shift" of the PL spectra with increase in sol concentration originates from the increase in the grain size with sol concentration which makes it suitable for generation of solid state lighting in light emitting diode. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:2683 / 2688
页数:6
相关论文
共 37 条
[1]   Fundamental optical absorption edge of undoped tetragonal zirconium dioxide [J].
Aita, CR ;
Hoppe, EE ;
Sorbello, RS .
APPLIED PHYSICS LETTERS, 2003, 82 (05) :677-679
[2]  
Batygov S. Kh., 1988, Soviet Physics - Solid State, V30, P378
[3]   Effect of sol temperature on the structure, morphology, optical and photoluminescence properties of nanocrystalline zirconia thin films [J].
Berlin, I. John ;
Lakshmi, J. S. ;
Lekshmy, S. Sujatha ;
Daniel, Georgi P. ;
Thomas, P. V. ;
Joy, K. .
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2011, 58 (03) :669-676
[4]   Sol-gel thin films for optics and photonics [J].
Biswas, Prasanta Kumar .
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2011, 59 (03) :456-474
[5]   Hydrolysis, condensation, and tetragonal phase formation in sol-gel zirconia prepared with electron-irradiated alkoxide solutions [J].
Bokhimi, X ;
Muñoz, E ;
Boldú, JL ;
Adem, E ;
Novaro, O ;
López, T ;
Rojas, F ;
Gómez, R ;
García-Ruiz, A .
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2000, 17 (03) :219-225
[6]   Effect of the dopant content on the physical properties of Y2O3-ZrO2 and CaO-ZrO2 thin films produced by evaporation and sputtering techniques [J].
Boulouz, M ;
Martin, L ;
Boulouz, A ;
Boyer, A .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 67 (03) :122-131
[7]  
Brinker C. J., 1975, SOL GEL SCI PHYS CHE, P803
[8]   The sol-gel preparation and AFM study of spinel CoFe2O4 thin film [J].
Cheng, FX ;
Peng, ZY ;
Xu, ZG ;
Liuao, CS ;
Yan, CH .
THIN SOLID FILMS, 1999, 339 (1-2) :109-113
[9]  
Chindaudom P., 1994, PHYS THIN FILMS, V19, P191
[10]   TRANSPARENT CONDUCTORS - A STATUS REVIEW [J].
CHOPRA, KL ;
MAJOR, S ;
PANDYA, DK .
THIN SOLID FILMS, 1983, 102 (01) :1-46