Performance improvement of nitride semiconductor-based deep-ultraviolet laser diodes with superlattice cladding layers

A deep-ultraviolet (DUV) laser diode (LD) consisting of specifically designed cladding layers involving superlattice nitride alloy has been proposed. Simulation studies of different cladding layers were carried out using Crosslight software. It was found that the proposed structure effectively suppresses the leakage of the optical field from the active region and the optical confinement coefficient is 1.45 times higher than that of the conventional structure. The proposed structure has a significant increase in laser power with a low threshold current. Moreover, the introduction of novel cladding layer suppresses the electron and hole leakage from the multiple quantum well (MQW) region, which provides an attractive solution for increasing the stimulated recombination rate in the MQW region leading to the improvement in the performance of the DUV LD.