Influence of Sputtering Power of Te and Annealing on Sb-Te Thin Films Fabricated by RF and DC Co-Sputtering

被引：6

作者：

Chen, Tianbao ^{[1
]}

Fan, Ping ^{[1
]}

Zheng, Zhuanghao ^{[1
]}

Zhang, Dongping ^{[1
]}

Cai, Xingmin ^{[1
]}

Liang, Guangxing ^{[1
]}

Chi, Jingrong ^{[1
]}

机构：

[1] Shenzhen Univ, Coll Phys Sci & Technol, Inst Thin Film Phys & Applicat, Shenzhen, Guangdong, Peoples R China

来源：

ADVANCED ENGINEERING MATERIALS, PTS 1-3 | 2011年 / 194-196卷

关键词：

Thermoelectric Thin Film; Antimony Telluride; Magnetron Sputtering; Co-Sputtering; EFFICIENCY; AG;

D O I：

10.4028/www.scientific.net/AMR.194-196.2400

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Antimony and tellurium were deposited on K9 glass via direct current and radio frequency magnetron co-sputtering. Antimony telluride thermoelectric thin films were simultaneously synthesized without post treatment. The influence of the sputtering power of Te and annealing of Sb-Te fabricated by magnetron sputtering were investigated. The maximum Seebeck coefficient of Sb-Te film was 212 mu V/K which was obtained at the sputtering power of Sb 4W and Te 60W separately. When annealed at 300 C, the electrical resistivity and Seebeck coefficient of the film are 6.67x10(4) S/m and 119 mu V/K. The power factor increased to the highest value of 9.4x 10(-4) W/mK(2) from 4x10(-5) W/mK(2) after post treatment of the as-deposited film.

引用

页码：2400 / 2403

页数：4

共 10 条

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