Electron mobility in a GaAs/AlAs quantum well with a thin AlAs middle barrier

被引：16
作者：
Wang, XF
Lima, ICD
Lei, XL
机构：
[1] Ctr Brasileiro Pesquisas Fis, Urca, BR-22290180 Rio De Janeiro, Brazil
[2] Chinese Acad Sci, Shanghai Inst Met, Shanghai 200050, Peoples R China
[3] Univ Estado Rio de Janeiro, Inst Fis, BR-20550013 Rio De Janeiro, Brazil
来源：
PHYSICAL REVIEW B | 1998年 / 58卷 / 19期
关键词：
D O I：
10.1103/PhysRevB.58.12609
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report a theoretical investigation of optical phonon modes in GaAs/AlAs double quantum wells using the dielectric continuum model. The phonon modes in the narrow and the wide limits for the widths of an inserted AlAs layer are discussed and compared with those in GaAs/AlAs single wells. The corresponding Frohlich interaction matrix elements are obtained and the intrasubband and intersubband electron-phonon interactions are studied. Employing the force balance equation, we calculated the electron mobility from the dielectric continuum model and from the bulk phonon approximation. The possibility of the enhancement of the electron mobility in this double-well structure is discussed. [S0163-1829(98)00943-6].
引用
收藏
页码：12609 / 12612
页数：4
相关论文
共 50 条
[21]   Polaron density of states of AlAs/GaAs/AlAs and PbS/PbTe/PbS type quantum well [J].
Boichuk, V. I. ;
Borusevych, V. A. ;
Kogoutiouk, I. P. .
CONDENSED MATTER PHYSICS, 2007, 10 (02) :219-228
[22]   Observation of resonant hole tunnelling through a (110) oriented AlAs/GaAs/AlAs quantum well [J].
Hayden, RK ;
Takamasu, T ;
Miura, N ;
Henini, M ;
Eaves, L ;
Hill, G .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (10) :1424-1428
[23]   Electron tunneling through thin barrier with smooth potential at GaAs/AlAs(001) heterointerfaces [J].
S. N. Grinyaev ;
G. F. Karavaev .
Physics of the Solid State, 2000, 42 :772-779
[24]   Electron tunneling through thin barrier with smooth potential at GaAs/AlAs(001) heterointerfaces [J].
Grinyaev, SN ;
Karavaev, GF .
PHYSICS OF THE SOLID STATE, 2000, 42 (04) :772-779
[25]   Manipulation of linear and nonlinear optical properties of GaSb quantum ring in AlGaAs/GaAs/AlGaAs quantum well and AlAs/GaAs/InGaAs/AlAs double quantum well [J].
Kehili, Mohamed Souhail ;
Sellami, Rihab ;
Ben Mansour, Afef ;
Melliti, Adnen .
OPTICAL AND QUANTUM ELECTRONICS, 2020, 52 (06)
[26]   NONRESONANT ELECTRON-CAPTURE IN GAAS ALAS ALGAAS DOUBLE-BARRIER QUANTUM-WELL INFRARED DETECTORS [J].
SCHNEIDER, H ;
VINATTIERI, A ;
SHAH, J ;
EHRET, S ;
LARKINS, EC ;
ROSSMANITH, M .
APPLIED PHYSICS LETTERS, 1994, 64 (08) :1015-1017
[27]   Manipulation of linear and nonlinear optical properties of GaSb quantum ring in AlGaAs/GaAs/AlGaAs quantum well and AlAs/GaAs/InGaAs/AlAs double quantum well [J].
Mohamed Souhail Kehili ;
Rihab Sellami ;
Afef Ben Mansour ;
Adnen Melliti .
Optical and Quantum Electronics, 2020, 52
[28]   Electron capture in AlGaAs/AlAs/GaAs double-barrier quantum well structures: Tunneling versus intervalley scattering [J].
Schneider, H ;
Larkins, EC .
SOLID-STATE ELECTRONICS, 1996, 40 (1-8) :133-137
[29]   Tunneling magnetoresistance of MnAs thin film/GaAs/AlAs/GaAs:MnAs nanoclusters and its AlAs barrier thickness dependence [J].
Hai, Pham Nam ;
Yokoyama, Masafumi ;
Ohya, Shinobu ;
Tanaka, Masaaki .
APPLIED PHYSICS LETTERS, 2006, 89 (24)
[30]   High capacitance ratio with GaAs/InGaAs/AlAs heterostructure quantum well-barrier varactors [J].
Duez, V ;
Melique, X ;
Vanbesien, O ;
Mounaix, P ;
Mollot, F ;
Lippens, D .
ELECTRONICS LETTERS, 1998, 34 (19) :1860-1861
12345