Electron mobility in a GaAs/AlAs quantum well with a thin AlAs middle barrier

被引：16
|
作者：
Wang, XF
Lima, ICD
Lei, XL
机构：
[1] Ctr Brasileiro Pesquisas Fis, Urca, BR-22290180 Rio De Janeiro, Brazil
[2] Chinese Acad Sci, Shanghai Inst Met, Shanghai 200050, Peoples R China
[3] Univ Estado Rio de Janeiro, Inst Fis, BR-20550013 Rio De Janeiro, Brazil
来源：
PHYSICAL REVIEW B | 1998年 / 58卷 / 19期
关键词：
D O I：
10.1103/PhysRevB.58.12609
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report a theoretical investigation of optical phonon modes in GaAs/AlAs double quantum wells using the dielectric continuum model. The phonon modes in the narrow and the wide limits for the widths of an inserted AlAs layer are discussed and compared with those in GaAs/AlAs single wells. The corresponding Frohlich interaction matrix elements are obtained and the intrasubband and intersubband electron-phonon interactions are studied. Employing the force balance equation, we calculated the electron mobility from the dielectric continuum model and from the bulk phonon approximation. The possibility of the enhancement of the electron mobility in this double-well structure is discussed. [S0163-1829(98)00943-6].
引用
收藏
页码：12609 / 12612
页数：4
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