3-D Thin Film Interposer Based on TGV (Through Glass Vias): An Alternative to Si-Interposer

被引:95
作者
Toepper, Michael [1 ]
Ndip, Ivan [1 ]
Erxleben, Robert [1 ]
Brusberg, Lars [1 ]
Nissen, Nils [1 ]
Schroeder, Henning [1 ,2 ]
Yamamoto, Hidefumi
Todt, Guido [3 ]
Reichl, Herbert [1 ]
机构
[1] Fraunhofer Inst Reliabil & Microintegrat Fraunhof, Gustav Meyer Allee 25, D-13355 Berlin, Germany
[2] NEC SCHOTT Components Corp, Koka, Shiga 5280034, Japan
[3] SCHOTT Elect Packaging GmbH, Prod Div Automot, Landshut, Germany
来源
2010 PROCEEDINGS 60TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) | 2010年
关键词
D O I
10.1109/ECTC.2010.5490887
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Interposers for SiP will become more and more important for advanced electronic systems. But through substrate vias are essential for the 3-D integration. Being a standard for laminate based materials this is much more complex for Si-wafers: High speed etching has to be combined with complex electrical isolation, diffusion barriers and void-free Cu-filling. Without doubt this can be solved in lab-scale but for high production scale cost is a tremendous barrier. Glass wafers with W-plugs have been intensively investigated in this paper. A new acronym has been posted to high-light this technology: TGV for Through Glass Vias. The results of modeling and simulation of TGV at RF/Microwave frequencies showed a very good compromise between wafer thickness, TGV-shape and via diameter for vertical metal plugs with 100 mu m diameters in 500 mu m thick glass wafer still very stable for thin film wafer processing without costly temporary wafer bonding processes. Therefore the HermeS (R) from Schott was chosen as the basis for a prototype of a bidirectional 4 x 10 Gbps electro-optical transceiver module. Thin film RDL and bumping of these wafers was possible without any modifications to Si-wafer. First thermal cycles showed very promising results for the reliability of this concept.
引用
收藏
页码:66 / 73
页数:8
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