Decomposition of interfacial SiO2 during HfO2 deposition

被引：48

作者：

Copel, M ^{[1
]}

Reuter, MC ^{[1
]}

机构：

[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 16期

关键词：

D O I：

10.1063/1.1621734

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth of HfO2 by Hf deposition in an oxidizing ambient is found to cause removal of interfacial SiO2. Medium-energy ion scattering results show that the reaction takes place during growth, and involves transport of oxygen through the HfO2 layer. An examination of the temperature dependence suggests that oxygen vacancy reactions are responsible. (C) 2003 American Institute of Physics.

引用

页码：3398 / 3400

页数：3

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