Layer-number dependent reflection spectra on MoS2 flakes on SiO2/Si substrate

被引：21

作者：

Li, Xiaoli ^{[1
]}

Shi, Yafang ^{[1
]}

Li, Shuai ^{[1
]}

Shi, Wei ^{[2
]}

Han, Wenpeng ^{[2
]}

Zhou, Chuan ^{[1
]}

Zhao, Xiaohui ^{[1
]}

Liang, Baolai ^{[1
]}

机构：

[1] Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

OPTICAL MATERIALS EXPRESS | 2018年 / 8卷 / 10期

基金：

中国国家自然科学基金;

关键词：

ELECTRONIC-STRUCTURE; SINGLE-LAYER; GRAPHENE; MONOLAYER; WSE2;

D O I：

10.1364/OME.8.003082

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

MoS2 flakes have attracted much attention due to their attractive properties. Optical reflectance techniques can prove to be very powerful techniques to study some of the thickness dependent physical properties, e.g. A and B excitonic peaks. Here, we measured reflection spectra of MoS(2 )flakes on SiO2/Si substrate in the broad wavelength range of 400-800 mn and studied the emission wavelength of A and B excitons as a function of the layer number. Moreover, we calculated the optimized SiO2 thickness to avoid the substrate-related interference effect influencing the investigation of exciton properties. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：3082 / 3091

页数：10

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