Shielding effect of on-chip interconnect inductance

被引:8
|
作者
El-Moursy, MA [1 ]
Friedman, EG [1 ]
机构
[1] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY 14627 USA
基金
美国国家科学基金会;
关键词
CMOS; gate delay; interconnect modeling; on-chip inductance; propagation delay; RLC interconnects; shielding effect;
D O I
10.1109/TVLSI.2004.842315
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Interconnect inductance introduces a shielding effect which decreases the effective capacitance seen by the driver of a circuit, reducing the gate delay. A model of the effective capacitance of an RLC load driven by a CMOS inverter is presented. The interconnect inductance decreases the gate delay and increases the time required for the signal to propagate across an interconnect, reducing the overall delay to drive an RLC load. Ignoring the line inductance overestimates the circuit delay, inefficiently oversizing the circuit driver. Considering line inductance in the design process saves gate area, reducing dynamic power dissipation. Average reductions in power of 17 % and area of 29 % are achieved for example circuits. An accurate model for a CMOS inverter and an RLC load is used to characterize the propagation delay. The accuracy of the delay model is within an average error of less than 9 % as compared to SPICE.
引用
收藏
页码:396 / 400
页数:5
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