Three-dimensional kinetic Monte Carlo simulation of prepatterned quantum-dot island growth

被引:9
|
作者
Pan, E. [1 ]
Sun, M.
Chung, P. W.
Zhu, R.
机构
[1] Univ Akron, Dept Civil Engn, Akron, OH 44325 USA
[2] Univ Akron, Dept Appl Math, Akron, OH 44325 USA
[3] USA, Res Lab, Aberdeen Proving Ground, MD 21005 USA
[4] ABS Amer, Offshore Engn Dept, Houston, TX 77060 USA
关键词
D O I
10.1063/1.2812572
中图分类号
O59 [应用物理学];
学科分类号
摘要
A special prepatterning method is proposed for spatially ordered self-organizing quantum dots on anisotropic semiconductor substrates. Using three-dimensional kinetic Monte Carlo simulations, atoms are deposited with varying intermediate interruption times. We demonstrate the effect of interruption time and long-range anisotropic strain energy on island size uniformity and lateral alignment.
引用
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页数:3
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