Demonstration of relaxed InGaN-based red LEDs grown with high active region temperature

被引：43

作者：

Chan, Philip ^{[1
]}

Rienzi, Vincent ^{[2
]}

Lim, Norleakvisoth ^{[3
]}

Chang, Hsun-Ming ^{[1
]}

Gordon, Michael ^{[3
]}

DenBaars, Steven P. ^{[1
,2
]}

Nakamura, Shuji ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Dept Chem Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS EXPRESS | 2021年 / 14卷 / 10期

基金：

美国国家科学基金会;

关键词：

MOCVD; Nitrides; InGaN; Relaxation; Relaxed InGaN; LIGHT-EMITTING-DIODES; EMISSION;

D O I：

10.35848/1882-0786/ac251d

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Red LEDs were grown by metalorganic chemical vapor deposition with a high active region temperature of 870 degrees C on a relaxed InGaN/GaN superlattice buffer. The buffer was 100% biaxially relaxed by the thermal decomposition of an InGaN underlayer, measured by high resolution X-ray diffraction. Fabricated LEDs showed a low forward voltage of 2.25 V at a current density of 25 Acm(-2) with no Al-containing layers in the active region, a peak emission wavelength of 633 nm at 200 Acm(-2) and an on-wafer peak external quantum efficiency of 0.05%. Uniform red emission and relaxation were observed across a two inch substrate.

引用

页数：4

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