Mode-coupling effects in non-equilibrium Green's function device simulation

被引：10
|
作者：
Takeda, H [1 ]
Mori, N [1 ]
机构：
[1] Osaka Univ, Dept Elect Engn, Suita, Osaka 5650871, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 4B期
关键词：
MOSFET; SOI-MOSFET; nanoscale device; quantum transport; non-equilibrium Green's function method; ballistic transport; QUANTUM TRANSPORT;
D O I：
10.1143/JJAP.44.2664
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We performed non-equilibrium Green's function (NEGF) simulations for a double-gate (DG) silicon-on-insulator (SOI) metal -oxide- semiconductor field-effect-transistors (MOSFETs) with an extra SiO2 bump, which enables us to modulate the mode-energy profile. Comparing the numerical results of real-space, coupled-mode space, and decoupled-mode space methods for expanding the Green's function, we estimate the accuracy of the mode space scheme and study mode-coupling effects on the source-to-drain current.
引用
收藏
页码：2664 / 2668
页数：5
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