Disorder from the Bulk Ionic Liquid in Electric Double Layer Transistors

被引：29

作者：

Petach, Trevor A. ^{[1
,2
]}

Reich, Konstantin V. ^{[3
,4
]}

Zhang, Xiao ^{[1
]}

Watanabe, Kenji ^{[5
]}

Taniguchi, Takashi ^{[5
]}

Shklovskii, Boris I. ^{[3
]}

Goldhaber-Gordon, David ^{[1
,2
]}

机构：

[1] Stanford Univ, Dept Appl Phys, Palo Alto, CA 94305 USA

[2] SLAG Natl Accelerator Lab, SIMES, Menlo Pk, CA 94025 USA

[3] Univ Minnesota, Fine Theoret Phys Inst, Minneapolis, MN 55455 USA

[4] Ioffe Inst, St Petersburg 194021, Russia

[5] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

来源：

ACS NANO | 2017年 / 11卷 / 08期

基金：

美国国家科学基金会; 俄罗斯科学基金会;

关键词：

ionic liquid; graphene; electronic transport; boron nitride; field-effect transistor; METAL-INSULATOR-TRANSITION; 2-DIMENSIONAL MATERIAL; BORON-NITRIDE; GRAPHENE; TRANSPORT; SURFACE; FILMS; GAS;

D O I：

10.1021/acsnano.7b03864

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ionic liquid gating has a number of advantages over solid-state gating, especially for flexible or transparent devices and for applications requiring high carrier densities. However, the large number of charged ions near the channel inevitably results in Coulomb scattering, which limits the carrier mobility in otherwise clean systems. We develop a model for this Coulomb scattering. We validate our model experimentally using ionic liquid gating of grapheneacross varying thicknesses of hexagonal boron nitride, demonstrating that disorder in the bulk ionic liquid often dominates the scattering.

引用

页码：8395 / 8400

页数：6

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