The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition

被引：15

作者：

Dietz, N. ^{[1
]}

Alevli, M. ^{[1
]}

Atalay, R. ^{[1
]}

Durkaya, G. ^{[1
]}

Collazo, R. ^{[2
]}

Tweedie, J. ^{[2
]}

Mita, S. ^{[2
]}

Sitar, Z. ^{[2
]}

机构：

[1] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30302 USA

[2] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 04期

关键词：

D O I：

10.1063/1.2840192

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of substrate polarity on the properties of InN layers grown by high-pressure chemical vapor deposition has been studied. The 2 Theta-omega x-ray diffraction scans on InN layers deposited on polar GaN epilayers revealed single-phase InN(0002) with a full width at half maximum (FWHM) of around 200 arc sec. InN layers grown on N-polar GaN exhibit larger FWHMs. Rocking curve analysis confirmed single-phase InN for both growth polarities, with FWHM values for omega-RC(002) at 2080 arc sec for InN grown on Ga-polar templates. The A(1)(LO) Raman mode analysis shows higher free carrier concentrations in InN grown on N-polar templates, indicating that polarity affects the incorporation of impurities. (c) 2008 American Institute of Physics.

引用

收藏

页数：3

相关论文

共 16 条

[1] Characterization of InN layers grown by high-pressure chemical vapor deposition [J].

Alevli, M. ;

Durkaya, G. ;

Weerasekara, A. ;

Perera, A. G. U. ;

Dietz, N. ;

Fenwick, W. ;

Woods, V. ;

Ferguson, I. .

APPLIED PHYSICS LETTERS, 2006, 89 (11)

[2] Energy band gap and optical properties of non-stoichiometric InN - theory and experiment [J].

Alexandrov, D ;

Butcher, KSA ;

Tansley, TL .

JOURNAL OF CRYSTAL GROWTH, 2006, 288 (02) :261-267

[3] InN, latest development and a review of the band-gap controversy [J].

Butcher, KSA ;

Tansley, TL .

SUPERLATTICES AND MICROSTRUCTURES, 2005, 38 (01) :1-37

[4] Excitation wavelength dependence of terahertz emission from InN and InAs [J].

Chern, Grace D. ;

Readinger, Eric D. ;

Shen, Hongen ;

Wraback, Michael ;

Gallinat, Chad S. ;

Koblmuller, Gregor ;

Speck, James S. .

APPLIED PHYSICS LETTERS, 2006, 89 (14)

[5] Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers [J].

Collazo, R ;

Mita, S ;

Aleksov, A ;

Schlesser, R ;

Sitar, Z .

JOURNAL OF CRYSTAL GROWTH, 2006, 287 (02) :586-590

[6] Polarity control of GaN thin films grown by metalorganic vapor phase epitaxy [J].

Collazo, R ;

Mita, S ;

Schlesser, R ;

Sitar, Z .

Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, 2 (07) :2117-2120

[7] Electronic and vibrational states in InN and InxGa1-xNsolid solutions [J].

Davydov, VY ;

Klochikhin, AA .

SEMICONDUCTORS, 2004, 38 (08) :861-898

[8] Raman scattering by the longitudinal optical phonon in InN: Wave-vector nonconserving mechanisms [J].

Demangeot, F ;

Pinquier, C ;

Frandon, J ;

Gaio, M ;

Briot, O ;

Maleyre, B ;

Ruffenach, S ;

Gil, B .

PHYSICAL REVIEW B, 2005, 71 (10)

[9]

DIETZ N, 2006, 3 NITRIDES SEMICONDU, V6, P203

[10] Optical properties of hexagonal GaN [J].

Kawashima, T ;

Yoshikawa, H ;

Adachi, S ;

Fuke, S ;

Ohtsuka, K .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (07) :3528-3535