Recessed Anode AlGaN/GaN Schottky Barrier Diode for Temperature Sensor Application

被引：9
作者：
Pu, Taofei [1 ,2 ]
Li, Xiaobo [1 ,2 ]
Wu, Junye [1 ,2 ]
Yang, Jiaying [1 ,2 ]
Lu, Youming [1 ,2 ]
Liu, Xinke [1 ,2 ]
Ao, Jin-Ping [3 ]
机构：
[1] Shenzhen Univ, Hanshan Normal Univ, Postdoctoral Workstn, Coll Mat Sci & Engn,Inst Microelect IME, Shenzhen 518060, Peoples R China
[2] Shenzhen Univ, Coll Phys & Optoelect Engn, Key Lab Optoelect Devices & Syst, Minist Educ & Guangdong Prov, Shenzhen 518060, Peoples R China
[3] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021年 / 68卷 / 10期
基金：
中国国家自然科学基金;
关键词：
Anodes; Temperature sensors; Wide band gap semiconductors; Aluminum gallium nitride; MODFETs; HEMTs; Schottky diodes; AlGaN; GaN heterostructure; recessed anode; Schottky barrier diode (SBD); temperature sensor; ELECTRIC-FIELD; PASSIVATION;
D O I：
10.1109/TED.2021.3105498
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
AlGaN/GaN Schottky barrier diode (SBD) temperature sensor with low turn-on voltage was fabricated by employing the recessed anode structure. This AlGaN/GaN SBD demonstrates good rectification in a broad temperature scope from 298 to 473 K. Compared with common planar diode, the recessed anode SBD shows a relatively lower turn-on voltage and better Schottky contact characteristics. The temperature-dependent forward voltage at a fixed current displays great linearity, contributing to a sensitivity of about 1.0 mV/K. The calculated sensitivities exhibit the downtrend by increasing current level, which is in agreement with the thermionic emission (TE) model. The recessed anode AlGaN/GaN SBDs show good potential in temperature sensor application.
引用
收藏
页码：5162 / 5166
页数：5
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