High-Performance Poly-Si TFTs Using Ultrathin HfSiOx Gate Dielectric for Monolithic Three-Dimensional Integrated Circuits and System on Glass Applications

被引：7

作者：

Lee, M. H. ^{[1
]}

Wu, S. L. ^{[2
]}

Yang, M. -J. ^{[3
]}

Chen, K. -J. ^{[1
]}

Luo, G. -L. ^{[4
]}

Lee, L. -S. ^{[5
]}

Kao, M. -J. ^{[5
]}

机构：

[1] Natl Taiwan Normal Univ, Inst Electroopt Sci & Technol, Taipei 116, Taiwan

[2] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 833, Taiwan

[3] Sunrise Global Solar Energy, Yilan 268, Taiwan

[4] Natl Nano Device Labs, Hsinchu 30078, Taiwan

[5] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu 31040, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 08期

关键词：

HfSiOx; high-kappa; poly-Si; subthreshold swing (SS); POLYCRYSTALLINE-SILICON;

D O I：

10.1109/LED.2010.2050573

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-performance poly-Si thin-film transistors (TFTs) using an ultrathin high-kappa metal gate stack with a subthreshold swing (SS) of 193 mV/dec when operating at room temperature and maximum thermal budget of 700 degrees C are readily compatible with monolithic 3-D integrated circuits (3D-ICs) and silicon-on-glass (SOG) applications. The SS is reduced to 31 mV/dec, and the on/off current ratio is increased to 10(8) at 77 K; the result is a significant reduction of leakage current and lower power consumption. Long-channel TFTs have a higher drain current noise spectral density S-ID and a smaller exponential frequency factor (gamma) due to the influence of numerous grain boundaries on carrier transport, as confirmed by gap state density extraction. These devices may pave the way for high-performance circuit designs and applications, such as monolithic 3D-ICs, SOG, and active-matrix organic LED.

引用

页码：824 / 826

页数：3

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