Annealing induced phase transition and optical properties of Ga2O3 thin films synthesized by sputtering technique

被引：31

作者：

Meng, Yijin ^{[1
]}

Gao, Yuqi ^{[1
]}

Chen, Keyu ^{[1
]}

Lu, Jixue ^{[1
]}

Xian, Fenglin ^{[1
,2
]}

Xu, Linhua ^{[1
,2
]}

Zheng, Gaige ^{[1
,2
]}

Kuang, Wenjian ^{[1
,2
]}

Cao, Zhaolou ^{[1
,2
]}

机构：

[1] Nanjing Univ Informat Sci Technol, Sch Phys & Optoelect Engn, Nanjing 210044, Peoples R China

[2] Nanjing Univ Informat Sci & Technol, Jiangsu Key Lab Optoelect Detect Atmosphere & Oce, Nanjing 210044, Peoples R China

来源：

OPTIK | 2021年 / 244卷 / 244期

关键词：

Ga2O3 thin films; Phase transition; Bandgap; Sputtering; BAND-GAP; GROWTH; TEMPERATURE;

D O I：

10.1016/j.ijleo.2021.167515

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Gallium oxide (Ga2O3) thin films were deposited on c-plane sapphire substrates at low temperature (RT) by magnetron sputtering method using Ga2O3 ceramic target and were post annealed at various temperatures ranging from 500 to 900 degrees C. The effect of annealing temperature on the surface morphology, crystalline structure, chemical composition and optical properties of Ga2O3 thin films were investigated. A phase separation is observed at 800 degrees C and a-phase Ga2O3 thin films is obtained at low annealing temperature while beta-Ga2O3 at high temperature. With annealing temperature increases, the optical bandgap decreases from 5.47 to 5.00 eV and the surface morphology become more and more smooth. A broad emission band centered at 550 nm is observed for all samples which can be attributed to the donor acceptor pair (DAP) recombination related to the oxygen vacancies.

引用

页数：7

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