Annealing induced phase transition and optical properties of Ga2O3 thin films synthesized by sputtering technique

被引：30

作者：

Meng, Yijin ^{[1
]}

Gao, Yuqi ^{[1
]}

Chen, Keyu ^{[1
]}

Lu, Jixue ^{[1
]}

Xian, Fenglin ^{[1
,2
]}

Xu, Linhua ^{[1
,2
]}

Zheng, Gaige ^{[1
,2
]}

Kuang, Wenjian ^{[1
,2
]}

Cao, Zhaolou ^{[1
,2
]}

机构：

[1] Nanjing Univ Informat Sci Technol, Sch Phys & Optoelect Engn, Nanjing 210044, Peoples R China

[2] Nanjing Univ Informat Sci & Technol, Jiangsu Key Lab Optoelect Detect Atmosphere & Oce, Nanjing 210044, Peoples R China

来源：

OPTIK | 2021年 / 244卷 / 244期

关键词：

Ga2O3 thin films; Phase transition; Bandgap; Sputtering; BAND-GAP; GROWTH; TEMPERATURE;

D O I：

10.1016/j.ijleo.2021.167515

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Gallium oxide (Ga2O3) thin films were deposited on c-plane sapphire substrates at low temperature (RT) by magnetron sputtering method using Ga2O3 ceramic target and were post annealed at various temperatures ranging from 500 to 900 degrees C. The effect of annealing temperature on the surface morphology, crystalline structure, chemical composition and optical properties of Ga2O3 thin films were investigated. A phase separation is observed at 800 degrees C and a-phase Ga2O3 thin films is obtained at low annealing temperature while beta-Ga2O3 at high temperature. With annealing temperature increases, the optical bandgap decreases from 5.47 to 5.00 eV and the surface morphology become more and more smooth. A broad emission band centered at 550 nm is observed for all samples which can be attributed to the donor acceptor pair (DAP) recombination related to the oxygen vacancies.

引用

页数：7

共 36 条

[1] Materials issues and devices of α- and β-Ga2O3 [J].

Ahmadi, Elaheh ;

Oshima, Yuichi .

JOURNAL OF APPLIED PHYSICS, 2019, 126 (16)

[2] Electrical Properties of Sn-Doped α-Ga2O3 Films on m-Plane Sapphire Substrates Grown by Mist Chemical Vapor Deposition [J].

Akaiwa, Kazuaki ;

Ota, Katsuya ;

Sekiyama, Takahito ;

Abe, Tomoki ;

Shinohe, Takashi ;

Ichino, Kunio .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2020, 217 (03)

[3] Review of gallium-oxide-based solar-blind ultraviolet photodetectors [J].

Chen, Xuanhu ;

Ren, Fangfang ;

Gu, Shulin ;

Ye, Jiandong .

PHOTONICS RESEARCH, 2019, 7 (04) :381-415

[4] Observation of low voltage driven green emission from erbium doped Ga2O3 light-emitting devices [J].

Chen, Zhengwei ;

Wang, Xu ;

Zhang, Fabi ;

Noda, Shinji ;

Saito, Katsuhiko ;

Tanaka, Tooru ;

Nishio, Mitsuhiro ;

Arita, Makoto ;

Guo, Qixin .

APPLIED PHYSICS LETTERS, 2016, 109 (02)

[5] Elements (Si, Sn, and Mg) doped α-Ga2O3: First-principles investigations and predictions [J].

Dong, Linpeng ;

Yu, Jiangang ;

Zhang, Yuming ;

Jia, Renxu .

COMPUTATIONAL MATERIALS SCIENCE, 2019, 156 :273-279

[6] Effects of post-annealing temperature and oxygen concentration during sputtering on the structural and optical properties of β-Ga2O3 films [J].

Dong, Linpeng ;

Jia, Renxu ;

Xin, Bin ;

Zhang, Yuming .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2016, 34 (06)

[7] Review of Ga2O3-based optoelectronic devices [J].

Guo, D. ;

Guo, Q. ;

Chen, Z. ;

Wu, Z. ;

Li, P. ;

Tang, W. .

MATERIALS TODAY PHYSICS, 2019, 11

[8] Phase tailoring and wafer-scale uniform hetero-epitaxy of metastable-phased corundum α-Ga2O3 on sapphire [J].

Hao, J. G. ;

Ma, T. C. ;

Chen, X. H. ;

Kuang, Y. ;

Li, L. ;

Li, J. ;

Ren, F. -F. ;

Gu, S. L. ;

Tan, H. H. ;

Jagadish, C. ;

Ye, J. D. .

APPLIED SURFACE SCIENCE, 2020, 513

[9] Effect of annealing temperature on structural and optical properties of gallium oxide thin films deposited by RF-sputtering [J].

Hassanien, A. M. ;

Atta, A. A. ;

El-Nahass, M. M. ;

Ahmed, Sameh, I ;

Shaltout, Abdallah A. ;

Al-Baradi, Ateyyah M. ;

Alodhayb, A. ;

Kamal, A. M. .

OPTICAL AND QUANTUM ELECTRONICS, 2020, 52 (04)

[10] Electrical properties, structural properties, and deep trap spectra of thin α-Ga2O3 films grown by halide vapor phase epitaxy on basal plane sapphire substrates [J].

Jeon, Dae-Woo ;

Son, Hoki ;

Hwang, Jonghee ;

Polyakov, A. Y. ;

Smirnov, N. B. ;

Shchemerov, I. V. ;

Chernykh, A. V. ;

Kochkova, A. I. ;

Pearton, S. J. ;

Lee, In-Hwan .

APL MATERIALS, 2018, 6 (12)

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