Reflection high-energy electron diffraction studies of wurtzite GaN grown by molecular beam epitaxy

被引：17

作者：

Hughes, OH ^{[1
]}

Korakakis, D ^{[1
]}

Cheng, TS ^{[1
]}

Blant, AV ^{[1
]}

Jeffs, NJ ^{[1
]}

Foxon, CT ^{[1
]}

机构：

[1] Univ Nottingham, Dept Phys, Nottingham NG7 2RD, England

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 04期

关键词：

D O I：

10.1116/1.590155

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a comprehensive reflection high-energy electron diffraction study of the surface structure of GaN as a function of substrate temperature and III-V ratio for growth using elemental gallium and active nitrogen derived from a rf plasma source. An emission spectroscopy analysis of the composition of the;nitrogen plasma showed that the neutral atomic species dominated the growth process. The effect of substrate pretreatment is also discussed. It was found that good quality growth accompanied by a reconstructed surface are only obtainable during growth under a slightly Ga-rich regime and after pretreatment by nitridation and the growth of a low temperature buffer layer. Reconstruction mode diagrams are presented both for layers during growth and also for layers which have been cooled after growth. The implications of these plots are discussed in terms of surface vacancy densities. (C) 1998 American Vacuum Society.

引用

页码：2237 / 2241

页数：5

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