High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers

被引：1
作者：
Wang Yang [1 ]
Qiu Ying-Ping [1 ]
Pan Jiao-Qing [1 ]
Zhao Ling-Juan [1 ]
Zhu Hong-Liang [1 ]
Wang Wei [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2010年 / 27卷 / 11期
基金：
中国国家自然科学基金;
关键词：
AUGER RECOMBINATION; THRESHOLD CURRENT; DEPENDENCE; DEVICE;
D O I：
10.1088/0256-307X/27/11/114201
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We fabricate 1.5 mu m InGaAsP/InP tunnel injection multiple-quantum-well (TI-MQW) Fabry-Perot (F-P) ridge lasers. The laser heterostructures, including an inner cladding layer and an InP tunnel barrier layer, are grown by metal-organic chemical-vapor deposition (MOCVD). Characteristic temperature.. 0 of 160K at 20 degrees C is obtained for 500-mu m-long lasers. T-0 is measured as high as 88K in the temperature range of 15-75 degrees C. Cavity length dependence of T-0 is investigated.
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页数：3
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