Optical identification using imperfections in 2D materials

被引:25
作者
Cao, Yameng [1 ]
Robson, Alexander J. [1 ]
Alharbi, Abdullah [2 ]
Roberts, Jonathan [1 ]
Woodhead, Christopher S. [1 ]
Noori, Yasir J. [1 ]
Bernardo-Gavito, Ramon [1 ]
Shahrjerdi, Davood [2 ]
Roedig, Utz [3 ]
Fal'ko, Vladimir I. [4 ]
Young, Robert J. [1 ]
机构
[1] Univ Lancaster, Phys Dept, Lancaster LA1 4YB, England
[2] NYU, Elect & Comp Engn, Brooklyn, NY 11201 USA
[3] Univ Lancaster, Sch Comp & Commun, Lancaster LA1 4WA, England
[4] Univ Manchester, Natl Graphene Inst, Manchester M13 9PL, Lancs, England
基金
英国工程与自然科学研究理事会; 美国国家科学基金会;
关键词
transition metal dichalcogenide; optical measurement; photoluminescence; security; physical unclonable functions; TRANSITION-METAL DICHALCOGENIDES; SINGLE-LAYER MOS2; QUANTUM CONFINEMENT; GRAIN-BOUNDARIES; MONOLAYER; SEMICONDUCTOR; GROWTH; DEPOSITION; RESISTANCE; DISULFIDE;
D O I
10.1088/2053-1583/aa8b4d
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The ability to uniquely identify an object or device is important for authentication. Imperfections, locked into structures during fabrication, can be used to provide a fingerprint that is challenging to reproduce. In this paper, we propose a simple optical technique to read unique information from nanometer-scale defects in 2D materials. Imperfections created during crystal growth or fabrication lead to spatial variations in the bandgap of 2D materials that can be characterized through photoluminescence measurements. We show a simple setup involving an angleadjustable transmission filter, simple optics and a CCD camera can capture spatially-dependent photoluminescence to produce complex maps of unique information from 2D monolayers. Atomic force microscopy is used to verify the origin of the optical signature measured, demonstrating that it results from nanometer-scale imperfections. This solution to optical identification with 2D materials could be employed as a robust security measure to prevent counterfeiting.
引用
收藏
页数:8
相关论文
共 54 条
[1]   Material and device properties of superacid-treated monolayer molybdenum disulfide [J].
Alharbi, Abdullah ;
Zahl, Percy ;
Shahrjerdi, Davood .
APPLIED PHYSICS LETTERS, 2017, 110 (03)
[2]   Electronic properties of monolayer tungsten disulfide grown by chemical vapor deposition [J].
Alharbi, Abdullah ;
Shahrjerdi, Davood .
APPLIED PHYSICS LETTERS, 2016, 109 (19)
[3]   Near-unity photoluminescence quantum yield in MoS2 [J].
Amani, Matin ;
Lien, Der-Hsien ;
Kiriya, Daisuke ;
Xiao, Jun ;
Azcatl, Angelica ;
Noh, Jiyoung ;
Madhvapathy, Surabhi R. ;
Addou, Rafik ;
Santosh, K. C. ;
Dubey, Madan ;
Cho, Kyeongjae ;
Wallace, Robert M. ;
Lee, Si-Chen ;
He, Jr-Hau ;
Ager, Joel W., III ;
Zhang, Xiang ;
Yablonovitch, Eli ;
Javey, Ali .
SCIENCE, 2015, 350 (6264) :1065-1068
[4]  
[Anonymous], 2008, SECURITY ENG
[5]   Dislocation motion and grain boundary migration in two-dimensional tungsten disulphide [J].
Azizi, Amin ;
Zou, Xiaolong ;
Ercius, Peter ;
Zhang, Zhuhua ;
Elias, Ana Laura ;
Perea-Lopez, Nestor ;
Stone, Greg ;
Terrones, Mauricio ;
Yakobson, Boris I. ;
Alem, Nasim .
NATURE COMMUNICATIONS, 2014, 5
[6]  
Baumeister P W, 2014, OPT COAT TECHNOL
[7]   The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2 [J].
Buscema, Michele ;
Steele, Gary A. ;
van der Zant, Herre S. J. ;
Castellanos-Gomez, Andres .
NANO RESEARCH, 2014, 7 (04) :561-571
[8]   Ultra-low power threshold for laser induced changes in optical properties of 2D molybdenum dichalcogenides [J].
Cadiz, Fabian ;
Robert, Cedric ;
Wang, Gang ;
Kong, Wilson ;
Fan, Xi ;
Blei, Mark ;
Lagarde, Delphine ;
Gay, Maxime ;
Manca, Marco ;
Taniguchi, Takashi ;
Watanabe, Kenji ;
Amand, Thierry ;
Marie, Xavier ;
Renucci, Pierre ;
Tongay, Sefaattin ;
Urbaszek, Bernhard .
2D MATERIALS, 2016, 3 (04)
[9]   Valley splitting in the transition-metal dichalcogenide monolayer via atom adsorption [J].
Chen, Xiaofang ;
Zhong, Liangshuai ;
Li, Xiao ;
Qi, Jingshan .
NANOSCALE, 2017, 9 (06) :2188-2194
[10]   Electrical Tuning of Exciton Binding Energies in Monolayer WS2 [J].
Chernikov, Alexey ;
van der Zande, Arend M. ;
Hill, Heather M. ;
Rigosi, Albert F. ;
Velauthapillai, Ajanth ;
Hone, James ;
Heinz, Tony F. .
PHYSICAL REVIEW LETTERS, 2015, 115 (12)