Investigation of Light Induced Carrier Transport Phenomena Through ZnCdS Nanocomposite Based Schottky Diode

被引：6

作者：

Das, Mrinmay ^{[1
]}

Middya, Somnath ^{[1
,2
]}

Datta, Joydeep ^{[1
]}

Dey, Arka ^{[1
]}

Jana, Rajkumar ^{[1
]}

Layek, Animesh ^{[1
,3
]}

Ray, Partha Pratim ^{[1
]}

机构：

[1] Jadavpur Univ, Dept Phys, Kolkata 700032, India

[2] Bankim Sardar Coll, Dept Phys, South 24 Paraganas, Tangrakhali 743329, India

[3] Bejoy Narayan Mahavidyalaya, Dept Phys, Itachuna 712147, Hooghly, India

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2016年 / 45卷 / 08期

关键词：

Zinc-cadmium-sulphide; nanocomposite; metal-semiconductor; carrier transport; Schottky parameters; PHOTOCATALYTIC HYDROGEN EVOLUTION; SOLID-SOLUTION PHOTOCATALYSTS; CURRENT-VOLTAGE; TEMPERATURE-DEPENDENCE; PARAMETERS; CONDUCTIVITY; EXTRACTION; DENSITY; STATES;

D O I：

10.1007/s11664-016-4614-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Here, we have discussed the electron transport phenomena through the interface formed by aluminium and hydrothermally synthesized Zinc-Cadmium-Sulphide (ZnCdS) nanocomposite. In this background, the structural, optical, and electrical characterization of the synthesized material were studied. The estimated optical band gap energy (=3.14 eV) and the room temperature conductivity (1.6 x 10(-6) S cm(-1)) of the synthesized nanomaterial motivated us to explore the metal/inorganic-semiconductor interface. The carrier transport mechanism under dark and light-illuminated conditions was analyzed by the thermionic emission theory of the metal-semiconductor junction. Significant changes in rectification ratio, barrier potential, and the ideality factor were observed under light irradiance. The effect of incident radiation on mobility-lifetime (mu tau) product and the diffusion length (L-D) was demonstrated for the device.

引用

页码：4293 / 4301

页数：9

共 40 条

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