Electrical characteristics and simulations of self-switching-diodes in SOI technology

被引：33

作者：

Farhi, G.

Saracco, E.

Beerens, J.

Morris, D.

Charlebois, S. A.

Raskin, J.-P.

机构：

[1] Univ Sherbrooke, Dept Genie Elect & Genie Informat, Sherbrooke, PQ J1K 2R1, Canada

[2] Univ Sherbrooke, Dept Phys, Sherbrooke, PQ J1K 2R1, Canada

[3] Catholic Univ Louvain, EMIC, B-1348 Louvain, Belgium

来源：

SOLID-STATE ELECTRONICS | 2007年 / 51卷 / 09期

基金：

加拿大自然科学与工程研究理事会;

关键词：

self-switching-diodes; SOI wafers; I-V characteristics; medici simulations; novel devices;

D O I：

10.1016/j.sse.2007.07.013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-switching devices (SSDs) are new nano-scale field effect active components. In the present work, these devices are made in siliconon-insulator (SOI) technology and operate at room temperature. We investigate their current-voltage (I-V) characteristics which show a diode-like behaviour due to electrostatic effects. Thermal activation measurements are presented and discussed. We also present simulations to gain better understanding of device physics and also to optimize the critical parameters of the fabrication process. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：1245 / 1249

页数：5

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