Deep Electronic Levels of AlxGa1-xN with a Wide Range of Al Composition Grown by Metal-Organic Vapor Phase Epitaxy

被引：15

作者：

Ooyama, Kimihito ^{[1
,2
,3
]}

Sugawara, Katsuya ^{[1
,2
]}

Okuzaki, Shinya ^{[1
,2
]}

Taketomi, Hiroyuki ^{[4
]}

Miyake, Hideto ^{[4
]}

Hiramatsu, Kazumasa ^{[4
]}

Hashizume, Tamotsu ^{[1
,2
,5
]}

机构：

[1] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan

[2] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0608628, Japan

[3] Sumitomo Met Min, Div Elect, Tokyo 1988601, Japan

[4] Mie Univ, Fac Engn, Dept Elect & Elect Engn, Tsu, Mie 5148507, Japan

[5] Japan Sci & Technol Agcy JST, CREST, Chiyoda Ku, Tokyo 1020075, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 10期

关键词：

TRANSIENT SPECTROSCOPY; OPTICAL-PROPERTIES; ALGAN; GAN; MECHANISM; FILMS; MOVPE; DEPENDENCE; INTERFACES; DEFECTS;

D O I：

10.1143/JJAP.49.101001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep electronic levels of AlxGa1-xN (0: 25 < x < 0: 60) were investigated by deep level transient spectroscopy (DLTS) and photocapacitance methods. Si-doped AlGaN layers were grown on an AlN/sapphire template by metal-organic vapor phase epitaxy. DLTS analysis using a sampling time window of up to 100 s showed two dominant deep levels with activation energies (Delta E) higher than 1.0 eV in AlxGa1-xN with x = 0.5 and 0.37. The densities of those levels were higher than 1 x 10(16) cm(-3). For the Al0.60Ga0.40N sample, the deeper levels (Delta E > 1. eV) were detected by photocapacitance measurement. It was found that the energy position of the dominant deep level closely followed the Fermi level stabilization energy reported by Walukiewicz et al. [J. Cryst. Growth 269 (2004) 119], indicating that the origin of the dominant deep level in AlGaN is related to a defect complex including anti-site defects and divacancies. (C) 2010 The Japan Society of Applied Physics

引用

页码：1010011 / 1010015

页数：5

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