Deep Electronic Levels of AlxGa1-xN with a Wide Range of Al Composition Grown by Metal-Organic Vapor Phase Epitaxy

被引：15

作者：

Ooyama, Kimihito ^{[1
,2
,3
]}

Sugawara, Katsuya ^{[1
,2
]}

Okuzaki, Shinya ^{[1
,2
]}

Taketomi, Hiroyuki ^{[4
]}

Miyake, Hideto ^{[4
]}

Hiramatsu, Kazumasa ^{[4
]}

Hashizume, Tamotsu ^{[1
,2
,5
]}

机构：

[1] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan

[2] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0608628, Japan

[3] Sumitomo Met Min, Div Elect, Tokyo 1988601, Japan

[4] Mie Univ, Fac Engn, Dept Elect & Elect Engn, Tsu, Mie 5148507, Japan

[5] Japan Sci & Technol Agcy JST, CREST, Chiyoda Ku, Tokyo 1020075, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 10期

关键词：

TRANSIENT SPECTROSCOPY; OPTICAL-PROPERTIES; ALGAN; GAN; MECHANISM; FILMS; MOVPE; DEPENDENCE; INTERFACES; DEFECTS;

D O I：

10.1143/JJAP.49.101001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep electronic levels of AlxGa1-xN (0: 25 < x < 0: 60) were investigated by deep level transient spectroscopy (DLTS) and photocapacitance methods. Si-doped AlGaN layers were grown on an AlN/sapphire template by metal-organic vapor phase epitaxy. DLTS analysis using a sampling time window of up to 100 s showed two dominant deep levels with activation energies (Delta E) higher than 1.0 eV in AlxGa1-xN with x = 0.5 and 0.37. The densities of those levels were higher than 1 x 10(16) cm(-3). For the Al0.60Ga0.40N sample, the deeper levels (Delta E > 1. eV) were detected by photocapacitance measurement. It was found that the energy position of the dominant deep level closely followed the Fermi level stabilization energy reported by Walukiewicz et al. [J. Cryst. Growth 269 (2004) 119], indicating that the origin of the dominant deep level in AlGaN is related to a defect complex including anti-site defects and divacancies. (C) 2010 The Japan Society of Applied Physics

引用

页码：1010011 / 1010015

页数：5

共 50 条

[1] Diffusion of Mg dopant in metal-organic vapor-phase epitaxy grown GaN and AlxGa1-xN [J].

Koehler, K. ;

Gutt, R. ;

Wiegert, J. ;

Kirste, L. .

JOURNAL OF APPLIED PHYSICS, 2013, 113 (07)

[2] Effect of growth conditions on the Al composition and optical properties of AlxGa1-xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy [J].

Soltani, S. ;

Bouzidi, M. ;

Chine, Z. ;

Toure, A. ;

Halidou, I. ;

El Jani, B. ;

Shakfa, M. K. .

THIN SOLID FILMS, 2017, 630 :2-6

[3] Localized deep levels in AlxGa1-xN epitaxial films with various Al compositions [J].

Shi Li-Yang ;

Shen Bo ;

Yan Jian-Chang ;

Wang Jun-Xi ;

Wang Ping .

CHINESE PHYSICS B, 2014, 23 (11)

[4] Variation of Surface Potentials of Si-Doped AlxGa1-xN (0 < x < 0.87) Grown on AlN/Sapphire Template by Metal-Organic Vapor Phase Epitaxy [J].

Kubo, Toshiharu ;

Taketomi, Hiroyuki ;

Miyake, Hideto ;

Hiramatsu, Kazumasa ;

Hashizume, Tamotsu .

APPLIED PHYSICS EXPRESS, 2010, 3 (02)

[5] Scanning electron microscope studies of cubic AlxGa1-xN films grown on GaAs(100) by metal organic vapor phase epitaxy (MOVPE) [J].

Xu, DP ;

Yang, H ;

Zhao, DG ;

Li, JB ;

Zheng, LX ;

Wang, YT ;

Li, SF ;

Duan, LH ;

Wu, RH .

JOURNAL OF CRYSTAL GROWTH, 1999, 203 (1-2) :40-44

[6] Growth kinetics of AlxGa1-xN grown via ammonia-based metal-organic molecular beam epitaxy [J].

Billingsley, Daniel ;

Henderson, Walter ;

Pritchett, David ;

Doolittle, W. Alan .

JOURNAL OF CRYSTAL GROWTH, 2010, 312 (02) :209-212

[7] Grain Boundary Related Electrical Transport in Al-rich AlxGa1-xN Layers Grown by Metal-Organic Chemical Vapor Deposition [J].

Yildiz, A. ;

Tasli, P. ;

Sarikavak, B. ;

Lisesivdin, S. B. ;

Ozturk, M. K. ;

Kasap, M. ;

Ozcelik, S. ;

Ozbay, E. .

SEMICONDUCTORS, 2011, 45 (01) :33-36

[8] In situ Eu doping into AlxGa1-xN grown by organometallic vapor phase epitaxy to improve luminescence properties [J].

Koizumi, Atsushi ;

Kawabata, Kosuke ;

Lee, Dong-gun ;

Nishikawa, Atsushi ;

Terai, Yoshikazu ;

Ofuchi, Hironori ;

Honma, Tetsuo ;

Fujiwara, Yasufumi .

OPTICAL MATERIALS, 2015, 41 :75-79

[9] Structural and optical analyses of AlxGa1-xN thin films grown by metal organic chemical vapor deposition [J].

Kucukgok, Bahadir ;

Lu, Na ;

Ferguson, Ian T. ;

Wang, Shu Chang ;

Zhang, Xiong ;

Feng, Zhe Chuan .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (02)

[10] Comparison of electrical properties and deep traps in p-AlxGa1-xN grown by molecular beam epitaxy and metal organic chemical vapor deposition [J].

Polyakov, A. Y. ;

Smirnov, N. B. ;

Govorkov, A. V. ;

Kozhukhova, E. A. ;

Dabiran, A. M. ;

Chow, P. P. ;

Wowchak, A. M. ;

Lee, In-Hwan ;

Ju, Jin-Woo ;

Pearton, S. J. .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (07)

← 1 2 3 4 5 →