Optoelectronic CMOS Transistors: Performance Advantages for Sub-7nm ULSI, RF ASIC, Memories, and Power MOSFETs

Substantial increase of output current, and I-on / I-off ratio for sub-7nm low power CMOS transistors, can be accomplished using a novel optoelectronic technology, which is 100% compatible with existing CMOS process flow. For RF or mixed signal ASICs, adding photonic components may improve the cut-off frequency, and reduce series resistance. Products that utilize power regulating devices, such as power MOSFETs, will benefit from the optoelectronic configuration to achieve much lower R-dson and high voltage at the same time. For semiconductor memories, such as DRAM or FLASH, the photonic technique may reduce the ERASE / WRITE / access time and improve the reliability.