Solution processable nanoparticles as high-k dielectric for organic field effect transistors

被引:10
|
作者
Ahmadi, Mahshid [2 ]
Phonthammachai, Nopphawan [1 ]
Shuan, Tan Huei [2 ]
White, Timothy J. [2 ]
Mathews, Nripan [2 ]
Mhaisalkar, Subodh G. [2 ]
机构
[1] Inst Mat Res & Engn, Singapore 117602, Singapore
[2] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
关键词
Dielectrics; Nanocrystalline materials; Sol-gel; Organic field effect transistor; THIN-FILM TRANSISTORS; LOW-VOLTAGE; GATE DIELECTRICS; BARIUM ORTHOTITANATE; LARGE-AREA; BATIO3; INSULATORS; MICROWAVE; DISPLAYS; ELECTRON;
D O I
10.1016/j.orgel.2010.07.007
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The need for low operating voltages in organic field effect transistors (OFETs) is a motivation for the development of low temperature solution processable synthesis of high dielectric constant materials. Specifically, the glycothermal synthesis of barium titanate nanoparticles (size 10-15 nm) is described here. The effect of reaction time, temperature and reactant ratio has been studied. An 85% yield of pure BaTiO3 was obtained at a temperature of 220 degrees C and a reaction time of 16 h with the H2O:propanol molar ratio fixed at 1:1. A suspension of these nanoparticles in ethanol was then used to fabricate the dielectric layers in OFETs. The roughness of the spun coated layers limited the performance of these transistors. The deposition of an overlayer of sol-gel silica on the nanoparticle films improved the charge transport properties within the pentacene organic thin films by up to two orders of magnitude. The combination of solution processable high dielectric constant BaTiO3 nanoparticle layer and sol-gel silica is promising for low voltage organic electronics. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:1660 / 1667
页数:8
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