GaN-based high-Q vertical-cavity light-emitting diodes

被引：15
作者：
Lu, Tien-Chang [1 ]
Kao, Tsung-Ting
Kao, Chih-Chiang
Chu, Jung-Tang
Yeh, Kang-Fan
Lin, Li-Fan
Peng, Yu-Chun
Huang, Hung-Wen
Kuo, Hao-Chung
Wang, Shing-Chung
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30050, Taiwan
[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30050, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 10期
关键词：
GaN; light-emitting diode (LED); vertical cavity; vertical-cavity LED (VCLED);
D O I：
10.1109/LED.2007.904906
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a fabrication and demonstration of a GaN-based high-Q vertical-cavity light-emitting diode (VCLED). The GaN VCLED is composed of a 25-pair high-reflectivity (98%) GaN/AlN distributed Bragg reflector (DBR), an eight-pair SiO2/Ta2O5 dielectric DBR (99%), and a three-A optical thickness InGaN/GaN active region. It shows a very narrow linewidth of 0.52 nm, corresponding to a cavity Q-value of 895 at a driving current of 10 mA and a dominant emission peak wavelength at 465.3 nm. In addition, this VCLED emission linewidth continues to decrease with an increasing injection current, suggesting a possible realization of GaN-based vertical-cavity surface emitting lasers.
引用
收藏
页码：884 / 886
页数：3
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