Excimer laser annealed poly-Si thin film transistor with self-aligned lightly doped drain structure

被引：12

作者：

Kim, YH ^{[1
]}

Hwang, CS ^{[1
]}

Song, YH ^{[1
]}

Chung, CH ^{[1
]}

Ko, YW ^{[1
]}

Sohn, CY ^{[1
]}

Kim, BC ^{[1
]}

Lee, JH ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Basic Res Lab, Yuseong Gu, Taejon 305350, South Korea

来源：

THIN SOLID FILMS | 2003年 / 440卷 / 1-2期

关键词：

poly-Si; excimer laser; grain; trap; dispersion;

D O I：

10.1016/S0040-6090(03)00853-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have made an excimer laser annealed poly-Si thin film transistor (TFT). The stress of the poly-Si films crystallized by excimer laser annealing is studied by Raman spectroscopy. The transverse-optic phonon frequency is independent of the excimer laser energy, but dependant on the precursor a-Si film thickness. The nMOS TFT with a self-aligned lightly doped drain (LDD) structure shows low leakage current. The large leakage current of the pMOS TFT with non-LDD structure is reduced by the off-state stress. The gate to channel capacitance as a function of gate voltage for nMOS TFT shows the characteristic parallel shift of the capacitance-voltage curves with frequency variation. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：169 / 173

页数：5

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