Theoretical and experimental study of the InP/InGaAs PIN diode for millimeter-wave MMIC applications

被引：4

作者：

Yang, Jung Gil ^{[1
]}

Choi, Sunkyu ^{[1
]}

Jeong, Yongsik ^{[1
]}

Yang, Kyounghoon ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Div Elect Engn, 373-1 Guseong Dong, Taejon 305701, South Korea

来源：

2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2007年

关键词：

D O I：

10.1109/ICIPRM.2007.381141

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dc and ac characteristics of InP/InGaAs PIN diodes have been investigated based on theoretical and experimental approaches. The switch performance of the PIN diode has been studied using a 2-D CAD simulator (Silvaco). Experimental data from a fabricated InP/InGaAs PIN diode was compared to the theoretical results. The developed InP/InGaAs PIN diode has demonstrated a 0.39 V turn on voltage, a 34 V breakdown voltage and a 5.23 THz cutoff frequency.

引用

页码：133 / 136

页数：4

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