Theoretical and experimental study of the InP/InGaAs PIN diode for millimeter-wave MMIC applications

被引：4
|
作者：
Yang, Jung Gil [1 ]
Choi, Sunkyu [1 ]
Jeong, Yongsik [1 ]
Yang, Kyounghoon [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Div Elect Engn, 373-1 Guseong Dong, Taejon 305701, South Korea
来源：
2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2007年
关键词：
D O I：
10.1109/ICIPRM.2007.381141
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The dc and ac characteristics of InP/InGaAs PIN diodes have been investigated based on theoretical and experimental approaches. The switch performance of the PIN diode has been studied using a 2-D CAD simulator (Silvaco). Experimental data from a fabricated InP/InGaAs PIN diode was compared to the theoretical results. The developed InP/InGaAs PIN diode has demonstrated a 0.39 V turn on voltage, a 34 V breakdown voltage and a 5.23 THz cutoff frequency.
引用
收藏
页码：133 / 136
页数：4
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