Efficient second harmonic generation in low-loss planar GaN waveguides

被引:21
|
作者
Gromovyi, Maksym [1 ]
Brault, Julien [1 ]
Courville, Aimeric [1 ]
Rennesson, Stephanie [1 ]
Semond, Fabrice [1 ]
Feuillet, Guy [4 ]
Baldi, Pascal [2 ]
Boucaud, Philippe [3 ]
Duboz, Jean-Yves [1 ]
De Micheli, Marc P. [2 ]
机构
[1] Univ Cote dAzur, CNRS, CRHEA, Rue Bernard Gregory, F-06560 Valbonne, France
[2] Univ Cote dAzur, CNRS, IN NI, Parc Valrose, F-06100 Nice, France
[3] Univ Paris Saclay, Univ Paris Sud, CNRS, Ctr Nanosci & Nanotechnol, Batiment 220,Rue Andre Ampere, F-91405 Orsay, France
[4] Univ Grenoble Alpes, CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
来源
OPTICS EXPRESS | 2017年 / 25卷 / 19期
关键词
NITRIDE; FILMS; RESONATORS;
D O I
10.1364/OE.25.023035
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We demonstrate low- loss GaN/AlGaN planar waveguides grown by molecular beam epitaxy on sapphire substrates. By using a proper AlGaN cladding layer and reducing surface roughness we reach <1dB/cm propagation losses at 633nm. These low propagation losses allow an efficient second harmonic generation using modal phase matching between a TM0 pump at 1260nm and a TM2 second harmonic at 630nm. A maximal power conversion of 2% is realized with an efficiency of 0.15%center dot W(-1)cm(-2). We provide a modelling that demonstrates broadband features of GaN/AlGaN platform by showing second harmonic wavelengths tunability from the visible up to the near-infrared spectral region. We discuss drawbacks of modal phase matching and propose a novel solution which allows a drastic improvement of modal overlaps with the help of a planar polarity inversion. This new approach is compatible with low propagation losses and may allow as high as 100%center dot W(-1)cm(-2) conversion efficiencies in the future. (C) 2017 Optical Society of America
引用
收藏
页码:23035 / 23044
页数:10
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