Doping and compensation in heavily Mg doped Al-rich AlGaN films

被引：24

作者：

Bagheri, Pegah ^{[1
]}

Klump, Andrew ^{[1
]}

Washiyama, Shun ^{[1
]}

Breckenridge, M. Hayden ^{[1
]}

Kim, Ji Hyun ^{[1
]}

Guan, Yan ^{[1
]}

Khachariya, Dolar ^{[3
]}

Quinones-Garcia, Cristyan ^{[1
]}

Sarkar, Biplab ^{[1
]}

Rathkanthiwar, Shashwat ^{[1
]}

Reddy, Pramod ^{[2
]}

Mita, Seiji ^{[2
]}

Kirste, Ronny ^{[2
]}

Collazo, Ramon ^{[1
]}

Sitar, Zlatko ^{[1
,2
]}

机构：

[1] North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[2] Adroit Mat, Cary, NC 27518 USA

[3] North Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 2022年 / 120卷 / 08期

关键词：

D O I：

10.1063/5.0082992

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Record low resistivities of 10 and 30 omega cm and room-temperature free hole concentrations as high as 3 x 10(18) cm(-3) were achieved in bulk doping of Mg in Al0.6Ga0.4N films grown on AlN single crystalline wafer and sapphire. The highly conductive films exhibited a low ionization energy of 50 meV and impurity band conduction. Both high Mg concentration (> 2 x 10(19) cm(-3)) and low compensation were required to achieve impurity band conduction and high p-type conductivity. The formation of V-N-related compensators was actively suppressed by chemical potential control during the deposition process. This work overcomes previous limitations in p-type aluminum gallium nitride (p-AlGaN) and offers a technologically viable solution to high p-conductivity in AlGaN and AlN.

引用

页数：6

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