Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect transistors

被引：12

作者：

Gajula, D. R. ^{[1
]}

McNeill, D. W. ^{[1
]}

Coss, B. E. ^{[2
]}

Dong, H. ^{[2
]}

Jandhyala, S. ^{[2
]}

Kim, J. ^{[2
]}

Wallace, R. M. ^{[2
]}

Armstrong, B. M. ^{[1
]}

机构：

[1] Queens Univ Belfast, Sch Elect Elect Engn & Comp Sci, Belfast BT9 5AH, Antrim, North Ireland

[2] Univ Texas Dallas, Richardson, TX 75080 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 19期

基金：

美国国家科学基金会;

关键词：

PASSIVATION;

D O I：

10.1063/1.4712564

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, nickel germanide Schottky contacts have been fabricated on n-type germanium (n-Ge) with an optimum barrier height of 0.63 eV. For rapid thermal annealing (RTA) temperatures above 300 degrees C, all phases of nickel and germanium convert to nickel mono-germanide (NiGe). However, higher RTA temperatures are also found to cause agglomeration of the NiGe phase and higher leakage current. So, the optimum temperature for Schottky-based source/drain contact formation on n-Ge is similar to 300 degrees C, where the nickel mono-germanide phase is formed but without phase agglomeration. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4712564]

引用

页数：3

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