Microstructure and electrical properties of CoNX thin films deposited by unbalanced magnetron sputtering

被引：22
作者：
Asahara, H [1 ]
Migita, T [1 ]
Tanaka, T [1 ]
Kawabata, K [1 ]
机构：
[1] Hiroshima Inst Technol, Dept Elect, Saeki Ku, Hiroshima 7315193, Japan
来源：
VACUUM | 2001年 / 62卷 / 2-3期
关键词：
cobalt nitride; magnetron sputtering; sputtering; multipolar magnetic plasma confinement; nanocomposite;
D O I：
10.1016/S0042-207X(00)00453-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The structure and electrical properties of cobalt nitride (CoNX) thin films, prepared by newly developed r.f. reactive sputtering with magnetically enhanced ionization by means of multipolar magnetic plasma confinement (MMPC), were studied. In an unbalanced magnetron sputtering system with MMPC, ferromagnetic materials can be sputtered at a low gas pressure (8.0 x 10(-2) Pa). It was found that lowering the total gas pressure (Ar + N-2) down to 8.0 x 10(-2) Pa resulted in a decrease in the resistivity of the films, whose value is about 10 mu Omega cm. The average size of the grain decreased with a decrease in the total gas pressure. Nanocomposite films of cobalt nitride with an average grain size of about 5 nm were formed by lowering the total gas pressure. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：293 / 296
页数：4
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