Temperature Influence on GaN HEMT Equivalent Circuit

被引：62

作者：

Crupi, Giovanni ^{[1
]}

Raffo, Antonio ^{[2
]}

Avolio, Gustavo ^{[3
]}

Schreurs, Dominique M. M. -P. ^{[3
]}

Vannini, Giorgio ^{[2
]}

Caddemi, Alina ^{[1
]}

机构：

[1] Univ Messina, Dept Engn, I-98166 Messina, Italy

[2] Univ Ferrara, Dept Engn, I-44122 Ferrara, Italy

[3] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Leuven, Belgium

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2016年 / 26卷 / 10期

关键词：

Equivalent circuit; gallium nitride (GaN); high electron-mobility transistor (HEMT); temperature; EXTRACTION; MODEL;

D O I：

10.1109/LMWC.2016.2601487

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The purpose of this letter is to present an experimental analysis of the temperature effects on the small-signal equivalent circuit of a GaN HEMT. With the aim of contributing to the exploration and advancement of this technology for high-power and high-temperature applications, the major intrinsic RF figures of merit together with the positive derivative of the real parts of the impedance parameters versus frequency are deeply investigated versus ambient temperature.

引用

收藏

页码：813 / 815

页数：3

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