Effect of Self-Assembled Monolayer (SAM) on the Oxide Semiconductor Thin Film Transistor

被引：14
作者：
Cho, Seung-Hwan [1 ,2 ]
Lee, Yong-Uk [1 ]
Lee, Jeong-Soo [1 ]
Jo, Kang-Moon [2 ]
Kim, Bo Sung [2 ]
Kong, Hyang-Shik [2 ]
Kwon, Jang-Yeon [3 ]
Han, Min-Koo [1 ]
机构：
[1] Seoul Natl Univ, Dept Elect Engn & Comp Sci, Seoul 151744, South Korea
[2] Samsung Elect, LCD Dept, R&D Ctr, Gyeonggi Do 446577, South Korea
[3] Yonsei Univ, Sch Integrated Technol, Inchon 406840, South Korea
来源：
JOURNAL OF DISPLAY TECHNOLOGY | 2012年 / 8卷 / 01期
关键词：
Back interface; oxide semiconductor; self- assembled monolayer (SAM); solution-based passivation;
D O I：
10.1109/JDT.2011.2169936
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we proposed the self-assembled monolayer (SAM) as a protection layer against plasma and chemically induced damages to the back interface of an oxide semiconductor during the deposition of the passivation layer. When a thin-film transistor (TFT) is passivated with plasma-enhanced chemical-vapor deposition (PECVD) SiO and solution-based materials, the back interface of the oxide semiconductor could be exposed to plasma and chemically induced damages, respectively. We employed SAMs on the back surface of the oxide semiconductor prior to the passivation process to suppress such damage. The hydrophobic Cl-SAM (3-chloropropyltriethoxysilane) suppressed the degradation in mobility and subthreshold slope (SS) due to ion bombardment during plasma treatment. The hydrophobic CH-SAM (octyltriethoxysilane) successfully blocked chemically induced damage due to solution-based passivation.
引用
收藏
页码：35 / 40
页数：6
相关论文
共 17 条
[1]   Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers [J].
Campbell, IH ;
Rubin, S ;
Zawodzinski, TA ;
Kress, JD ;
Martin, RL ;
Smith, DL ;
Barashkov, NN ;
Ferraris, JP .
PHYSICAL REVIEW B, 1996, 54 (20) :14321-14324
[2]   High-performance, spin-coated zinc tin oxide thin-film transistors [J].
Chang, Y. -J. ;
Lee, D. -H. ;
Herman, G. S. ;
Chang, C. -H. .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2007, 10 (05) :H135-H138
[3]   Reactive metal contact at indium-tin-oxide/self-assembled monolayer interfaces [J].
Cho, JH ;
Park, YD ;
Kim, DH ;
Kim, WK ;
Jang, HW ;
Lee, JL ;
Cho, KW .
APPLIED PHYSICS LETTERS, 2006, 88 (10)
[4]   Tuning of metal work functions with self-assembled monolayers [J].
de Boer, B ;
Hadipour, A ;
Mandoc, MM ;
van Woudenbergh, T ;
Blom, PWM .
ADVANCED MATERIALS, 2005, 17 (05) :621-+
[5]   Effects of the permanent dipoles of self-assembled monolayer-treated insulator surfaces on the field-effect mobility of a pentacene thin-film transistor [J].
Jang, Yunseok ;
Cho, Jeong Ho ;
Kim, Do Hwan ;
Park, Yeong Don ;
Hwang, Minkyu ;
Cho, Kilwon .
APPLIED PHYSICS LETTERS, 2007, 90 (13)
[6]   Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors [J].
Jeong, Jae Kyeong ;
Yang, Hui Won ;
Jeong, Jong Han ;
Mo, Yeon-Gon ;
Kim, Hye Dong .
APPLIED PHYSICS LETTERS, 2008, 93 (12)
[7]   Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules [J].
Kang, Donghun ;
Lim, Hyuck ;
Kim, Changjung ;
Song, Ihun ;
Park, Jaechoel ;
Park, Youngsoo ;
Chung, JaeGwan .
APPLIED PHYSICS LETTERS, 2007, 90 (19)
[8]   Ink-Jet-Printed Zinc-Tin-Oxide Thin-Film Transistors and Circuits With Rapid Thermal Annealing Process [J].
Kim, Yong-Hoon ;
Kim, Kwang-Ho ;
Oh, Min Suk ;
Kim, Hyun Jae ;
Han, Jeong In ;
Han, Min-Koo ;
Park, Sung Kyu .
IEEE ELECTRON DEVICE LETTERS, 2010, 31 (08) :836-838
[9]   Solvent-mediated threshold voltage shift in solution-processed transparent oxide thin-film transistors [J].
Kim, Yong-Hoon ;
Kim, Hyun Soo ;
Han, Jeong-In ;
Park, Sung Kyu .
APPLIED PHYSICS LETTERS, 2010, 97 (09)
[10]   Control of carrier density by self-assembled monolayers in organic field-effect transistors [J].
Kobayashi, S ;
Nishikawa, T ;
Takenobu, T ;
Mori, S ;
Shimoda, T ;
Mitani, T ;
Shimotani, H ;
Yoshimoto, N ;
Ogawa, S ;
Iwasa, Y .
NATURE MATERIALS, 2004, 3 (05) :317-322
12