Electric Control of Friction on Silicon Studied by Atomic Force Microscope

被引：15

作者：

Jiang, Yan ^{[1
]}

Yue, Lili ^{[2
]}

Yan, Boshen ^{[1
]}

Liu, Xi ^{[1
]}

Yang, Xiaofei ^{[1
]}

Tai, Guoan ^{[3
]}

Song, Juan ^{[1
]}

机构：

[1] Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang, Peoples R China

[2] Henan Univ Tradit Chinese Med, Sch Med, Zhengzhou, Peoples R China

[3] Nanjing Univ Aeronaut & Astronaut, Inst Nanosci, Minist Educ, Key Lab Intelligent Nano Mat & Devices, Nanjing, Jiangsu, Peoples R China

来源：

NANO | 2015年 / 10卷 / 03期

基金：

中国国家自然科学基金;

关键词：

Friction; electric field; silicon; atomic force microscope; WATER; FIELD;

D O I：

10.1142/S1793292015500381

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigated friction on an n-type silicon surface using an atomic force microscope when a bias voltage was applied to the sample. Friction forces on the same track line were measured before and after the bias voltages were applied and it was found that the friction forces in n-type silicon can be tuned reversibly with the bias voltage. The dependence of adhesion forces between the silicon nitride tip and Si sample on the bias voltages approximately follows a parabolic law due to electrostatic force, which results in a significant increase in the friction force at an applied electric field.

引用

页数：5

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