Radiative and non-radiative recombination processes in ultra-violet InGaN light emitting diodes

被引：0
|
作者：
Narukawa, Y [1 ]
Saijou, S [1 ]
Kawakami, Y [1 ]
Fujita, S [1 ]
Mukai, T [1 ]
Nakamura, S [1 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan
来源：
BLUE LASER AND LIGHT EMITTING DIODES II | 1998年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Radiative and non-radiative recombination processes have been assessed in the ultra-violet In0.01Ga0.99N light emitting diodes (LEDs) by means of electroreflectance (ER), photo-induced voltage (PV), and time-resolved photoluminescence (TRPL) spectroscopy. It was found that the effect of small In-addition to the GaN active layer plays an important role for suppressing non-radiative recombination process.
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页码：288 / 291
页数：4
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