A Fully Integrated Three-Level 11.6nC Gate Driver Supporting GaN Gate Injection Transistors

被引：0
作者：
Seidel, Achim [1 ]
Wicht, Bernhard [1 ,2 ]
机构：
[1] Reutlingen Univ, Reutlingen, Germany
[2] Leibniz Univ Hannover, Hannover, Germany
来源：
2018 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE - (ISSCC) | 2018年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：384 / +
页数：3
相关论文
共 6 条
  • [1] Bortis D, 2016, IEEE INT POWER ELEC, P21, DOI 10.1109/IPEMC.2016.7512256
  • [2] Ke XG, 2016, ISSCC DIG TECH PAP I, V59, P302, DOI 10.1109/ISSCC.2016.7418027
  • [3] Nagai S., 2012, 2012 IEEE International Solid-State Circuits Conference (ISSCC), P404, DOI 10.1109/ISSCC.2012.6177066
  • [4] Seidel A, 2017, ISSCC DIG TECH PAP I, P432, DOI 10.1109/ISSCC.2017.7870446
  • [5] Song MK, 2015, ISSCC DIG TECH PAP I, V58, P302, DOI 10.1109/ISSCC.2015.7063046
  • [6] Three-Level Gate Drivers for eGaN HEMTs in Resonant Converters
    Zhang, Zhi-Liang
    Dong, Zhou
    Hu, Dong-Dong
    Zou, Xue-Wen
    Ren, Xiaoyong
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2017, 32 (07) : 5527 - 5538
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