Grain size reduction of CoCrPt-SiO2 media by oxidation of RuCr intermediate layer grain boundary

被引：4
|
作者：
Park, Sang Hwan [1 ]
Kim, Seon Ok [1 ]
Oh, Hoon Sang [2 ]
Choa, Sung Hoon [2 ]
Lee, Taek Dong [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, 373-1 Guseung Dong, Taejon, South Korea
[2] Samsung Adv Inst Technol, Adv Recording Project Team, Gyunggido 44960, South Korea
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 12 | 2007年 / 4卷 / 12期
关键词：
D O I：
10.1002/pssc.200777147
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The grain size reduction mechanism of CoCrPt-SiO2 perpendicular magnetic recording media by oxygen reactive sputtering of RuCr intermediate layer has been investigated as a function of oxygen content in the At sputtering gas. The media stack was Ta/Ru/RuCr/CoCrPt-SiO2. It was found that, by the oxygen addition, Cr and Ru oxides were formed at grain boundaries of the RuCr layer and this was the reason of the intermediate layer grain size reduction, which induced the reduction of the recording layer grain size. C-axis alignment of RuCr (0002) plane, however, was degraded as the oxygen gas ratio increased. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：4516 / +
页数：2
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