Analytical model of single-gate silicon-on-insulator (SOI) tunneling field-effect transistors (TFETs)

被引：89

作者：

Lee, Min Jin ^{[1
]}

Choi, Woo Young ^{[1
]}

机构：

[1] Sogang Univ, Dept Elect Eng, Seoul 121742, South Korea

来源：

SOLID-STATE ELECTRONICS | 2011年 / 63卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

Tunneling field-effect transistor (TFET); Band-to-band tunneling; Analytical modeling; Poisson's equation;

D O I：

10.1016/j.sse.2011.05.008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a two-dimensional analytical model of single-gate silicon-on-insulator (SOI) tunneling field-effect transistors (TFETs). Potential and electric field intensity calculated by Poisson's equation are used to extract tunneling current values. The validity of the proposed model has been confirmed by comparing the analytical results with finite-element method (FEM) results. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：110 / 114

页数：5

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