Al-Induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth

被引：31
|
作者：
Kurosawa, Masashi [1 ,2 ]
Toko, Kaoru [1 ,2 ]
Kawabata, Naoyuki [1 ]
Sadoh, Taizoh [1 ]
Miyao, Masanobu [1 ]
机构：
[1] Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan
[2] JSPS Res Fellow, Chiyoda Ku, Tokyo 1028472, Japan
来源：
SOLID-STATE ELECTRONICS | 2011年 / 60卷 / 01期
基金：
日本学术振兴会;
关键词：
Al-induced crystallization; Orientation control; Liquid phase epitaxy; Si; Ge; LAYER EXCHANGE; TEMPERATURE; SILICON; ALUMINUM; INTERFACE; OXIDE;
D O I：
10.1016/j.sse.2011.01.033
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We comprehensively investigate Al-induced crystallization (AIC) of Si to achieve (0 0 1) and (1 1 1)-oriented Si films on quartz substrates. These phenomena are systematically explained by 'preferential interfacial-nucleation model' considering the nucleation sites and the phase transition of the interfacial Al oxide layers. Moreover, we demonstrate the lateral liquid phase epitaxy of Ge by using the orientation-controlled AIC-Si films as crystal seed. This technique enables high quality hetero-epitaxy of SiGe and Ge on transparent insulating substrates. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：7 / 12
页数：6
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