Trtansition from biexcitons to electron-hole plasma in photoluminescence properties of a GaAs/AlAs multiple-quantum-well structure

被引：0
|
作者：
Ichida, H [1 ]
Tsuji, K [1 ]
Mizoguchi, K [1 ]
Nishimura, H [1 ]
Nakayama, M [1 ]
机构：
[1] Osaka City Univ, Fac Engn, Dept Appl Phys, Sumiyoshi Ku, Osaka 5588585, Japan
来源：
PROCEEDINGS OF THE 2000 INTERNATIONAL CONFERENCE ON EXCITONIC PROCESSES IN CONDENSED MATTER | 2001年
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D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report photoluminescence (PL) properties under various excitation-power conditions in a GaAs (15.0 nm)/AlAs(15.0 nm) multiple-quantum-well structure. We have clearly observed the PL bands from the biexciton and electron-hole plasma, and estimated the biexciton binding energy and the band-gap renormalization in the electron-hole plasma. The spectral change of the PL bands as a function of the excitation power demonstrates the transition from the biexciton to the electron-hole plasma under intense excitation conditions.
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页码：225 / 228
页数：4
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