Comparison of Power Cycling Results of discrete GaN Cascodes for Automotive Power Electronics with high Temperature Swings

被引：0

作者：

Lippold, Florian ^{[1
]}

Hauenschild, Philipp ^{[1
]}

Mallwitz, Regine ^{[1
]}

机构：

[1] TU Braunschweig, Inst Elect MACHINES TRACTION & DRIVES, Braunschweig, Germany

来源：

2022 24TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'22 ECCE EUROPE) | 2022年

关键词：

Lifetime; Power cycling; wide bandgap devices; Gallium Nitride (GaN); Automotive component;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

High voltage rated GaN HEMTs are attractive for automotive applications such as on-board charger or auxiliary power supplies. Nowadays GaN is packaged as single chips in discrete housings. In this paper a power cycling set up and results for GaN components in discrete TO-247 package are presented.

引用

页数：9