Effect of spontaneous polarization change on current-voltage characteristics of thin ferroelectric films

被引：1

作者：

Podgorny, Yu V. ^{[1
]}

Lavrov, P. P. ^{[1
]}

Vorotilov, K. A. ^{[1
]}

Sigov, A. S. ^{[1
]}

机构：

[1] Moscow State Tech Univ Radio Engn Elect & Automat, Moscow 119454, Russia

来源：

PHYSICS OF THE SOLID STATE | 2015年 / 57卷 / 03期

关键词：

NEGATIVE DIFFERENTIAL RESISTIVITY; LEAKAGE CURRENT; MEMORY; CAPACITORS; BEHAVIOR;

D O I：

10.1134/S1063783415030221

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The role of a change in the spontaneous polarization charge in the formation of negative differential conductance regions of the current-voltage characteristics of thin ferroelectric films has been determined. It has been shown that the polarization recovery current, which appears due to partial depolarization of a preliminarily polarized film, prevails over the intrinsic leakage current of the ferroelectric film in the coercive field region and corresponds to the Weibull distribution. The influence of polarization recovery current decreases with decreasing voltage sweep rate.

引用

页码：476 / 479

页数：4

共 20 条

[1] Electrical properties and leakage current behavior of un-doped and Ti-doped lea zirconate thin films synthesized by sol-gel method [J].

Alkoy, Ebru Mensur ;

Shiosaki, Tadashi .

THIN SOLID FILMS, 2008, 516 (12) :4002-4010

[2] Leakage current characteristics of lead-zirconate-titanate thin film capacitors for memory device applications [J].

Chen, HM ;

Tsaur, SW ;

Lee, JYM .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (07) :4056-4060

[3] Physics of thin-film ferroelectric oxides [J].

Dawber, M ;

Rabe, KM ;

Scott, JF .

REVIEWS OF MODERN PHYSICS, 2005, 77 (04) :1083-1130

[4] Negative differential resistivity and positive temperature coefficient of resistivity effect in the diffusion-limited current of ferroelectric thin-film capacitors [J].

Dawber, M ;

Scott, JF .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (49) :L515-L521

[5] Polarization relaxation induced by a depolarization field in ultrathin ferroelectric BaTiO3 capacitors -: art. no. 237602 [J].

Kim, DJ ;

Jo, JY ;

Kim, YS ;

Chang, YJ ;

Lee, JS ;

Yoon, JG ;

Song, TK ;

Noh, TW .

PHYSICAL REVIEW LETTERS, 2005, 95 (23)

[6] Role of precursors in the formation of lead zirconate titanate thin films [J].

Kotova, N. M. ;

Vorotilov, K. A. ;

Seregin, D. S. ;

Sigov, A. S. .

INORGANIC MATERIALS, 2014, 50 (06) :612-616

[7] Negative differential resistance in ferroelectric lead zirconate titanate thin films: Influence of interband tunneling on leakage current [J].

Maity, AK ;

Lee, JYM ;

Sen, A ;

Maiti, HS .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (10) :7155-7158

[8] DEPOLARIZATION FIELDS IN THIN FERROELECTRIC FILMS [J].

MEHTA, RR ;

SILVERMAN, BD ;

JACOBS, JT .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (08) :3379-3385

[9] FERROELECTRIC THIN-FILM TECHNOLOGY FOR SEMICONDUCTOR MEMORY [J].

MOAZZAMI, R .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (04) :375-390

[10] Simulation of Negative Differential Resistivity in Thin Ferroelectric Films [J].

Podgorny, Yu. ;

Sigov, A. ;

Vishnevskiy, A. ;

Vorotilov, K. .

FERROELECTRICS, 2014, 465 (01) :28-35

← 1 2 →