Kinetics of point defects and amorphization processes in irradiated solid films

被引：0

作者：

Ovid'ko, IA ^{[1
]}

Reizis, AB ^{[1
]}

机构：

[1] Russian Acad Sci, Lab Theory Defects Mat, Inst Problems Mech Engn, St Petersburg 199178, Russia

来源：

FOURTH INTERNATIONAL WORKSHOP ON NONDESTRUCTIVE TESTING AND COMPUTER SIMULATIONS IN SCIENCE AND ENGINEERING | 2001年 / 4348卷

关键词：

amorphization; point defects; thin films;

D O I：

10.1117/12.417660

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

A theoretical model is suggested which describes the evolution of ensembles of point defects that give rise to solid state amorphization in initially crystalline films under irradiation. A kinetic equation for the density of point defects (vacancies. and interstitial atoms) in irradiated solid films is proposed and solved with the assumption that the effect of ion implantation on the amorphization is negligible. In the framework of the proposed model, the temperature dependence of the dose-to-amorphization is calculated and compared with the corresponding experimental data (H. Abe et al, Nucl.Instrum. Meth. Phys.Res. B 127/128,170-175 (1997)).

引用

页码：270 / 274

页数：5

共 18 条

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