Microscopic modeling of gain and luminescence in semiconductors

被引：41

作者：

Hader, J ^{[1
]}

Moloney, JV

Koch, SW

Chow, WW

机构：

[1] Univ Arizona, Arizona Ctr Math Sci, Tucson, AZ 85721 USA

[2] Univ Arizona, Ctr Opt Sci, Tucson, AZ 85721 USA

[3] Univ Marburg, Fachbereich Phys, D-35032 Marburg, Germany

[4] Univ Marburg, Wissensch Zentrum Mat Wissensch, D-35032 Marburg, Germany

[5] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2003年 / 9卷 / 03期

关键词：

absorption; gain; gain measurement; modeling; photo luminescence (PL); quantum-well lasers;

D O I：

10.1109/JSTQE.2003.818342

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The capabilities of a fully microscopic approach for the calculation of optical material properties of semiconductor lasers are reviewed. Several comparisons between the results of these calculations and measured data are used to demonstrate that the approach yields excellent quantitative agreement with the experiment. It is outlined how this approach allows one to predict the optical properties of devices under high-power operating conditions based only on low-intensity photo luminescence (PL) spectra. Examples for the gain-, absorption-, PL- and linewidth enhancement factor-spectra in single and multiple quantum-well structures, superlattices, Type 11 quantum wells and quantum dots, and for various material systems are discussed.

引用

页码：688 / 697

页数：10

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