Lateral Graphene-Contacted Vertically Stacked WS2/MoS2 Hybrid Photodetectors with Large Gain

被引:123
作者
Tan, Haijie [1 ]
Xu, Wenshuo [1 ]
Sheng, Yuewen [1 ]
Lau, Chit Siong [2 ]
Fan, Ye [1 ]
Chen, Qu [1 ]
Tweedie, Martin [1 ]
Wang, Xiaochen [1 ]
Zhou, Yingqiu [1 ]
Warner, Jamie H. [1 ]
机构
[1] Univ Oxford, Dept Mat, Parks Rd, Oxford OX1 3PH, England
[2] ASTAR, Inst Mat Res & Engn, 2 Fusionopolis Way,Innovis 08-03, Singapore 138634, Singapore
关键词
charge transfer; heterostructures; MoS2; photodetectors; WS2; CHEMICAL-VAPOR-DEPOSITION; PHOTOCURRENT GENERATION; CHARGE-TRANSFER; MONOLAYER WS2; TRANSITION; HETEROSTRUCTURES; MOS2; CRYSTALS; EXCITONS;
D O I
10.1002/adma.201702917
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A demonstration is presented of how significant improvements in all-2D photodetectors can be achieved by exploiting the type-II band alignment of vertically stacked WS2/MoS2 semiconducting heterobilayers and finite density of states of graphene electrodes. The photoresponsivity of WS2/MoS2 hetero-bilayer devices is increased by more than an order of magnitude compared to homobilayer devices and two orders of magnitude compared to monolayer devices of WS2 and MoS2, reaching 10(3) A W-1 under an illumination power density of 1.7 x 10(2) mW cm(-2). The massive improvement in performance is due to the strong Coulomb interaction between WS2 and MoS2 layers. The efficient charge transfer at the WS2/MoS2 heterointerface and long trapping time of photogenerated charges contribute to the observed large photoconductive gain of approximate to 3 x 10(4). Laterally spaced graphene electrodes with vertically stacked 2D van der Waals heterostructures are employed for making high-performing ultrathin photodetectors.
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页数:8
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